MORPHOLOGICAL ANALYSIS OF MMIC DISTRIBUTED AMPLIFIERS
نویسندگان
چکیده
منابع مشابه
MMIC class-F power amplifiers using field-plated GaN HEMTs
Abstract: Class-F microwave monolithic integrated circuit (MMIC) power amplifiers (PA) fabricated in a GaN technology are reported. Field-plated GaN HEMT devices are used for highpower performance. Two MMICs are reported. The first class-F MMIC PA operating at 2.0GHz achieved a power-added efficiency (PAE) of 50% with 38dBm output power and 6.2W/mm power density. A second class-F PA operating a...
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We discuss results of low noise amplifier Monolithic Millimeter-wave Integrated Circuits (MMICs), which were designed for specific frequencies in the range of 70-200 GHz. We report on room temperature and cryogenic noise performance for a variety of circuits. The designs utilize Northrop Grumman Corporation’s (NGC) 35 nm gate length InP HEMT technology. Some of the lowest reported noise figures...
متن کاملHigh Efficiency Class-F MMIC Power Amplifiers at Ku-Band
Two high efficiency Ku-band pHEMT power amplifier MMICs are presented in this paper. A single stage, high efficiency amplifier provides a peak power added efficiency of 57.6% with 10.5 dB associated gain and 26.5 dBm output power into a 50Ω load at 14 GHz. Additionally, a dual stage, high gain amplifier provides a peak power added efficiency of 50.4% with 19.7 dB associated gain and 27.5 dBm ou...
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High-reliability performance of a Q-band MMIC amplifier fabricated using TRW’s 0.1 μm production AlGaAs/GaAs HEMT process technology is reported. Operating at an accelerated life test conditions of Vds=4.2V and Ids=150mA/mm, two-stage balanced amplifiers were lifetested at threetemperatures (Ta=255 C, Ta=270 C, and Ta=285 C) in air ambient. The activation energy (Ea) is as high as 1.7 eV, achie...
متن کاملEvaluation of biasing and protection circuitry components for cryogenic MMIC low-noise amplifiers
Millimeter-wave integrated circuits with gate lengths as short as 35 nm are demonstrating extremely low-noise performance, especially when cooled to cryogenic temperatures. These operate at low voltages and are susceptible to damage from electrostatic discharge and improper biasing, as well as being sensitive to low-level interference. Designing a protection circuit for low voltages and tempera...
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ژورنال
عنوان ژورنال: Issues of radio electronics
سال: 2020
ISSN: 2686-7680,2218-5453
DOI: 10.21778/2218-5453-2020-6-40-46